TOKYO, March 1, 2017 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the power loss and physical size of power supply systems for air conditioners, photovoltaic power systems and more, effective immediately.

SiC-SBD (BD20060T)

SiC-SBD (BD20060S)

Product Features

Silicon carbide contributes to lower power consumption and compact size
-Improved energy conversion results in about 21% less power loss compared to silicon (Si) products
-Enables high-speed switching and downsizing of peripheral components, such as reactors
Improved reliability thanks to junction-barrier Schottky (JBS) structure
-Combines Schottky barrier with p-n junction
-JBS structure helps to achieve high reliability

Sale Schedule

Series Model Package Specification Shipment
SiC-SBD BD20060T TO-220 20A/600V Mar. 1, 2017
BD20060S TO-247 Sep. 1, 2017

Note that the releases are accurate at the time of publication but may be subject to change without notice.