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Mitsubishi Electric to Launch N-series 1200V SiC-MOSFETLow power consumption and miniaturization of power-supply systems, such as EV on-board chargers and photovoltaic power systems

FOR IMMEDIATE RELEASE No. 3361

TOKYO, June 16, 2020 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its N-series 1200V SiC-MOSFET (silicon-carbide metal-oxide-semiconductor field-effect transistor) featuring low power loss and high tolerance1 to self-turn-on. The new series will help to reduce the power consumption and miniaturize power supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers, photovoltaic power systems and more. Sample shipments will start this July.

Mitsubishi Electric will exhibit its new N-series 1200V SiC-MOSFET at major trade shows, including PCIM Asia 2020 in Shanghai, China from November 16 to 18.

  1. 1Input capacitance/mirror capacitance (Ciss/Crss), as calculated by Mitsubishi Electric

N-series 1200V SiC-MOSFET

Product Features

  1. 1)Reduced power consumption and miniaturization of power-supply systems
    • Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving an industry-leading2 figure of merit (FOM3) of 1,450mΩ·nC. Power consumption in power-supply systems is reduced by approximately 85% compared to using conventional Si-IGBTs.
    • By reducing mirror capacitance4, self-turn-on tolerance improves by 14 times compared with competitor's products. Thus, fast switching operation can be realized and helps reduce switching loss.
    • Reduced switching-power loss enables the downsizing and simplification of cooling systems as well as the downsizing of peripheral components, such as reactor by driving the power semiconductor with a higher carrier frequency5, thereby helping to reduce the cost and size of overall power-supply systems.
    1. 2As of June 16, 2020 according to Mitsubishi Electric research
    2. 3Performance index of Power MOSFET, calculated by multiplying the on-resistance by the gate-drain charge (100°C junction temperature). Smaller values indicate better performance
    3. 4Stray capacitance between Gate and Drain existing in MOSFET structure (Crss)
    4. 5Frequency that determines the ON/OFF timing of the switching element in an inverter circuit
  2. 2)Six models for various applications including AEC-Q101 compliant models
    • The product lineup includes models which are qualified with Automotive Electronics Council's AEC-Q101 standards. Therefore, the N-series SiC-MOSFET can be used not only in industrial applications such as photovoltaic systems, it can also be used in EV on-board chargers.

Sales Schedule

Product Standards Model VDS RDS(on)_typ. IDmax@25°C Package Sample
availability
SiC-MOSFET AEC-Q101 BM080N120SJ 1200V 80mΩ 38A TO-247-3 July 2020
BM040N120SJ 40mΩ 68A
BM022N120SJ 22mΩ 102A
— BM080N120S 80mΩ 38A
BM040N120S 40mΩ 68A
BM022N120S 22mΩ 102A

Note

Note that the press releases are accurate at the time of publication but may be subject to change without notice.

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